Description: Point Defects in Semiconductors and Insulators Please note: this item is printed on demand and will take extra time before it can be dispatched to you (up to 20 working days). Determination of Atomic and Electronic Structure from Paramagnetic Hyperfine Interactions Author(s): Hans-Joachim Queisser, Johann-Martin Spaeth, Harald Overhof Format: Paperback Publisher: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG, Germany Imprint: Springer-Verlag Berlin and Heidelberg GmbH & Co. K ISBN-13: 9783642627224, 978-3642627224 Synopsis The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.
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Book Title: Point Defects in Semiconductors and Insulators
Number of Pages: 492 Pages
Language: English
Publication Name: Point Defects in Semiconductors and Insulators: Determination of Atomic and Electronic Structure from Paramagnetic Hyperfine Interactions
Publisher: Springer-Verlag Berlin AND Heidelberg Gmbh & Co. KG
Publication Year: 2012
Subject: Engineering & Technology
Item Height: 235 mm
Item Weight: 771 g
Type: Textbook
Author: Johann-Martin Spaeth, Harald Overhof
Subject Area: Material Science
Series: Springer Series in Materials Science
Item Width: 155 mm
Format: Paperback
