Description: *** NEW & ORIGINAL *** Quantity1 SeriesHEXFET Packaging Anti-Static FET TypeMOSFET N-Channel, Metal Oxide FET FeatureStandard Drain to Source Voltage (Vdss)150V Current - Continuous Drain (Id) @ 25°C21A (Tc) Rds On (Max) @ Id, Vgs82 mOhm @ 12A, 10V Vgs(th) (Max) @ Id4V @ 250µA Gate Charge (Qg) @ Vgs95nC @ 10V Input Capacitance (Ciss) @ Vds1300pF @ 25V Power - Max3.8W Mounting TypeSurface Mount Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device PackageD2PAK
Price: 2.99 USD
Location: Edinburg, Texas
End Time: 2024-08-21T16:10:29.000Z
Shipping Cost: 5.25 USD
Product Images
Item Specifics
Restocking Fee: No
Return shipping will be paid by: Buyer
All returns accepted: Returns Accepted
Item must be returned within: 30 Days
Refund will be given as: Money Back
Drain to Source Voltage (Vdss):: 150 V
Mounting Type:: Surface Mount (SMD)
Vgs(th) (Max) @ Id:: 4V @ 250uA
Drive Voltage (Max Rds On, Min Rds On):: 10 V
Package/Case: D2PAK
MPN: IRF3315S
Current - Continuous Drain (Id) @ 25 deg C:: 21A (Tc)
Minimum Operating Temperature: -55 °C (-67 °F)
Brand: International Rectifier
Series: HEXFET
Type: N-Channel MOSFET
Unit Type: Unit
FET Type:: N-Channel
Series:: HEXFET
Packaging: Bulk
Maximum Power Dissipation: 3.8W (Ta), 94W (Tc)
Number of Pins: 2 Leads + Tab
Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V
Maximum Operating Temperature: 175 °C (347 °F)
Rds On (Max) @ Id, Vgs:: 82 mOhm @ 12 A, 10 V
Vgs (Max):: +/-20V
Unit Quantity: 1
Technology:: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V
